IRFHM830DTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Threshold Voltage :

1.8V

Power Dissipation-Max :

2.8W Ta 37W Tc

Mounting Type :

Surface Mount

Package / Case :

8-VQFN Exposed Pad

JESD-30 Code :

S-PDSO-N5

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

5

Nominal Vgs :

1.8 V

Factory Lead Time :

14 Weeks

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.8W

Case Connection :

DRAIN

Continuous Drain Current (ID) :

20A

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 20A, 10V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

40A

Published :

2010

Number of Pins :

8

Number of Elements :

1

Element Configuration :

Single

ECCN Code :

EAR99

Fall Time (Typ) :

6.7 ns

Current - Continuous Drain (Id) @ 25°C :

20A Ta 40A Tc

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Height :

990.6μm

Length :

3.2766mm

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Turn-Off Delay Time :

9.1 ns

Series :

HEXFET®

Transistor Element Material :

SILICON

Terminal Position :

Dual

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1797pF @ 25V

Turn On Delay Time :

9.8 ns

Resistance :

7.1mOhm

Width :

3.3mm

Vgs (Max) :

±20V

Mount :

Surface Mount

Rise Time :

20ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)