IRFHM830DTR2PBF
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- Mfr.Part #
- IRFHM830DTR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-VQFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 20A PQFN
- Stock
- 9,299
- In Stock ：
- 9,299
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 3.2766mm
- Vgs(th) (Max) @ Id :
- 2.35V @ 50μA
- Number of Elements :
- 1
- Packaging :
- Digi-Reel®
- Turn On Delay Time :
- 9.8 ns
- Series :
- HEXFET®
- Power Dissipation :
- 37W
- Threshold Voltage :
- 1.8V
- Recovery Time :
- 24 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Height :
- 990.6μm
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 4.3m Ω @ 20A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta 40A Tc
- Min Operating Temperature :
- -55°C
- Rise Time :
- 20ns
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1797pF @ 25V
- Nominal Vgs :
- 1.8 V
- Fall Time (Typ) :
- 6.7 ns
- Published :
- 2013
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 2.8W
- Turn-Off Delay Time :
- 9.1 ns
- Continuous Drain Current (ID) :
- 20A
- Package / Case :
- 8-VQFN Exposed Pad
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 3.3mm
- Mount :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRFHM830DTR2PBF
N-Channel Digi-Reel® 4.3m Ω @ 20A, 10V 1797pF @ 25V 27nC @ 10V 8-VQFN Exposed Pad
IRFHM830DTR2PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1797pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 9.1 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1.8V.
IRFHM830DTR2PBF Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 9.1 ns
a threshold voltage of 1.8V
IRFHM830DTR2PBF Applications
There are a lot of Infineon Technologies
IRFHM830DTR2PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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