IRFHM8235TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 10V

Drain Current-Max (Abs) (ID) :

50A

Terminal Form :

Flat

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 20A, 10V

Continuous Drain Current (ID) :

16A

Transistor Element Material :

SILICON

Rise Time :

16ns

Factory Lead Time :

10 Weeks

Radiation Hardening :

No

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

5.2 ns

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

7.9 ns

Power Dissipation-Max :

3W Ta 30W Tc

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Threshold Voltage :

1.8V

Number of Elements :

1

Drain to Source Breakdown Voltage :

25V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

7.5 ns

FET Type :

N-Channel

Number of Pins :

8

REACH SVHC :

No SVHC

Number of Terminations :

5

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

16A Ta

JESD-30 Code :

S-PDSO-F5

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Published :

2013

Mounting Type :

Surface Mount

Package / Case :

8-PowerTDFN

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

240A

Resistance :

6.2mOhm

Lead Free :

Lead Free