IRFHM7194TRPBF
- Mfr.Part #
- IRFHM7194TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 9.3A/34A 8PQFN
- Stock
- 41,972
- In Stock :
- 41,972
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 16.9mOhm
- Number of Elements :
- 1
- Published :
- 2013
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 34A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- FASTIRFET™, HEXFET®
- Package / Case :
- 8-PowerTDFN
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 733pF @ 50V
- Power Dissipation-Max :
- 2.8W Ta 37W Tc
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Dual
- Number of Terminations :
- 5
- Current - Continuous Drain (Id) @ 25°C :
- 9.3A Ta 34A Tc
- Pulsed Drain Current-Max (IDM) :
- 95A
- Number of Pins :
- 8
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs(th) (Max) @ Id :
- 3.6V @ 50μA
- Drain Current-Max (Abs) (ID) :
- 9.3A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 16.4m Ω @ 20A, 10V
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 100V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- S-PDSO-N5
- Avalanche Energy Rating (Eas) :
- 220 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Terminal Form :
- NO LEAD
- Datasheets
- IRFHM7194TRPBF

N-Channel Tape & Reel (TR) 16.4m Ω @ 20A, 10V ±20V 733pF @ 50V 19nC @ 10V 100V 8-PowerTDFN
IRFHM7194TRPBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 220 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 733pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 34A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 9.3A.Peak drain current is 95A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFHM7194TRPBF Features
the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 34A
based on its rated peak drain current 95A.
a 100V drain to source voltage (Vdss)
IRFHM7194TRPBF Applications
There are a lot of Infineon Technologies
IRFHM7194TRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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