IRFHM4234TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

25V

Transistor Application :

SWITCHING

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.1V @ 25μA

Resistance :

4.4mOhm

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 30A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Avalanche Energy Rating (Eas) :

39 mJ

Mount :

Surface Mount

Fall Time (Typ) :

5.3 ns

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

7.8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

ECCN Code :

EAR99

Terminal Position :

Dual

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

63A

Number of Terminations :

5

Continuous Drain Current (ID) :

20A

Length :

3.3mm

Number of Pins :

5

Published :

2013

Element Configuration :

Single

Turn-Off Delay Time :

8 ns

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.8W Ta 28W Tc

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Series :

FASTIRFET™, HEXFET®

REACH SVHC :

No SVHC

Width :

3.3mm

Input Capacitance (Ciss) (Max) @ Vds :

1011pF @ 13V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Package / Case :

8-TQFN Exposed Pad

Pulsed Drain Current-Max (IDM) :

270A

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Rise Time :

30ns

Height :

900μm

Threshold Voltage :

1.6V

Contact Plating :

Copper, Silver, Tin

Radiation Hardening :

No

Power Dissipation :

2.8W

FET Type :

N-Channel