IRFHM4231TRPBF
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- Mfr.Part #
- IRFHM4231TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 40A 8PQFN
- Stock
- 57,699
- In Stock ：
- 57,699
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 12 ns
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Length :
- 3.3mm
- DS Breakdown Voltage-Min :
- 25V
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 2.7W Ta 29W Tc
- Number of Terminations :
- 5
- Package / Case :
- 8-PowerTDFN
- Factory Lead Time :
- 13 Weeks
- Mounting Type :
- Surface Mount
- Series :
- HEXFET®
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 8
- Turn On Delay Time :
- 8.7 ns
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Dual
- JESD-30 Code :
- S-PDSO-N5
- Continuous Drain Current (ID) :
- 22A
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Avalanche Energy Rating (Eas) :
- 42 mJ
- Published :
- 2013
- Drain to Source Voltage (Vdss) :
- 25V
- Threshold Voltage :
- 1.6V
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 30A, 10V
- Fall Time (Typ) :
- 5.9 ns
- Height :
- 900μm
- Width :
- 5mm
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1270pF @ 13V
- Drain-source On Resistance-Max :
- 0.0046Ohm
- Base Part Number :
- IRFHM4231
- Rise Time :
- 28ns
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.1V @ 35µA
- Mount :
- Surface Mount
- Datasheets
- IRFHM4231TRPBF
N-Channel Tape & Reel (TR) 3.4m Ω @ 30A, 10V ±20V 1270pF @ 13V 20nC @ 10V 25V 8-PowerTDFN
IRFHM4231TRPBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 42 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1270pF @ 13V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 22A amps.It is [12 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.6V.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRFHM4231TRPBF Features
the avalanche energy rating (Eas) is 42 mJ
a continuous drain current (ID) of 22A
the turn-off delay time is 12 ns
a threshold voltage of 1.6V
a 25V drain to source voltage (Vdss)
IRFHM4231TRPBF Applications
There are a lot of Infineon Technologies
IRFHM4231TRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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