IRFHM4226TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Package / Case :

8-TQFN Exposed Pad

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 30A, 10V

Mount :

Surface Mount

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

25V

Power Dissipation :

2.7W

Fall Time (Typ) :

8.1 ns

Continuous Drain Current (ID) :

28A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Turn-Off Delay Time :

14 ns

Series :

HEXFET®

Resistance :

2.2MOhm

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.7W Ta 39W Tc

Length :

3.3mm

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.1V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 13V

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

420A

Width :

3.3mm

Threshold Voltage :

1.6V

Radiation Hardening :

No

Number of Elements :

1

Number of Pins :

5

Published :

2013

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

40A

ECCN Code :

EAR99

Rise Time :

35ns

Current - Continuous Drain (Id) @ 25°C :

28A Ta

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Turn On Delay Time :

11 ns

Height :

900μm

Case Connection :

DRAIN

FET Type :

N-Channel