IRFH9310TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Number of Elements :

1

Series :

HEXFET®

Vgs(th) (Max) @ Id :

2.4V @ 100μA

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 21A, 10V

Number of Terminations :

3

Nominal Vgs :

-1.9 V

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 4.5V

Fall Time (Typ) :

70 ns

Power Dissipation-Max :

3.1W Ta

Element Configuration :

Single

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

-1.9V

Current - Continuous Drain (Id) @ 25°C :

21A Ta 40A Tc

Turn-Off Delay Time :

65 ns

Power Dissipation :

3.1W

Drain to Source Breakdown Voltage :

-30V

Drain Current-Max (Abs) (ID) :

40A

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

21A

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Package / Case :

8-PowerVDFN

Input Capacitance (Ciss) (Max) @ Vds :

5250pF @ 15V

Width :

5mm

Radiation Hardening :

No

Height :

950μm

Transistor Application :

SWITCHING

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Published :

2010

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PDSO-N3

Drain to Source Voltage (Vdss) :

30V

Rise Time :

47ns

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Turn On Delay Time :

25 ns

Drain-source On Resistance-Max :

0.0046Ohm

Transistor Element Material :

SILICON

Length :

6mm