IRFH8337TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

12ns

FET Type :

N-Channel

Vgs (Max) :

±20V

Fall Time (Typ) :

4.1 ns

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

12A Ta 35A Tc

Pulsed Drain Current-Max (IDM) :

65A

Series :

HEXFET®

Turn On Delay Time :

6.4 ns

Transistor Element Material :

SILICON

Published :

2011

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Power Dissipation :

3.2W

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

High Reliability

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-F5

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 10V

Turn-Off Delay Time :

5.7 ns

Radiation Hardening :

No

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Power Dissipation-Max :

3.2W Ta 27W Tc

Case Connection :

DRAIN

Continuous Drain Current (ID) :

12A

Number of Terminations :

5

Factory Lead Time :

17 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Nominal Vgs :

1.8 V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

12.8m Ω @ 16.2A, 10V

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Pins :

8

Terminal Form :

Flat