IRFH8337TR2PBF
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- Mfr.Part #
- IRFH8337TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9.7A 5X6 PQFN
- Stock
- 7,071
- In Stock ：
- 7,071
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 1.8 V
- Width :
- 5mm
- Drain to Source Resistance :
- 12.8mOhm
- Threshold Voltage :
- 1.8V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Height :
- 1.17mm
- Vgs(th) (Max) @ Id :
- 2.35V @ 25µA
- Power Dissipation :
- 3.2W
- REACH SVHC :
- No SVHC
- Published :
- 2012
- Element Configuration :
- Single
- Rise Time :
- 12ns
- Resistance :
- 12.8mOhm
- Fall Time (Typ) :
- 4.1 ns
- Turn-Off Delay Time :
- 5.7 ns
- Turn On Delay Time :
- 6.4 ns
- FET Type :
- N-Channel
- Series :
- HEXFET®
- Continuous Drain Current (ID) :
- 12A
- Input Capacitance (Ciss) (Max) @ Vds :
- 790pF @ 10V
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Packaging :
- Cut Tape (CT)
- Drain to Source Breakdown Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 790pF
- RoHS Status :
- RoHS Compliant
- Recovery Time :
- 18 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Rds On Max :
- 12.8 mΩ
- Radiation Hardening :
- No
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 12.8mOhm @ 16.2A, 10V
- Max Power Dissipation :
- 3.2W
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount
- Length :
- 5.85mm
- Supplier Device Package :
- PQFN (5x6)
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Package / Case :
- 8-PowerTDFN
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta 35A Tc
- Datasheets
- IRFH8337TR2PBF
N-Channel Cut Tape (CT) 12.8mOhm @ 16.2A, 10V 790pF @ 10V 10nC @ 10V 30V 8-PowerTDFN
IRFH8337TR2PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 790pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [5.7 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 12.8mOhm.A turn-on delay time of 6.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).
IRFH8337TR2PBF Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 5.7 ns
single MOSFETs transistor is 12.8mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRFH8337TR2PBF Applications
There are a lot of Infineon Technologies
IRFH8337TR2PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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