IRFH8334TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Case Connection :

DRAIN

Terminal Form :

Flat

Rise Time :

14ns

Transistor Element Material :

SILICON

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.009Ohm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

JESD-609 Code :

e3

Number of Terminations :

5

Published :

2007

Terminal Position :

Dual

Series :

HEXFET®

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

8.3 ns

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Power Dissipation-Max :

3.2W Ta 30W Tc

Transistor Application :

SWITCHING

Turn-Off Delay Time :

7 ns

Nominal Vgs :

1.8 V

Avalanche Energy Rating (Eas) :

35 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

14A

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Current - Continuous Drain (Id) @ 25°C :

14A Ta 44A Tc

Power Dissipation :

3.2W

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 10V

Additional Feature :

High Reliability

Number of Pins :

8

Fall Time (Typ) :

4.6 ns

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-F5

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

9m Ω @ 20A, 10V

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)