IRFH8334TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

7 ns

Nominal Vgs :

1.8 V

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 10V

Length :

5.85mm

Rds On Max :

9 mΩ

Drain to Source Resistance :

9mOhm

Height :

1.17mm

Rds On (Max) @ Id, Vgs :

9mOhm @ 20A, 10V

Recovery Time :

20 ns

Continuous Drain Current (ID) :

14A

Published :

2013

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

3.2W

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Max Power Dissipation :

3.2W

FET Type :

N-Channel

Mount :

Surface Mount

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

14A Ta 44A Tc

Number of Pins :

8

Rise Time :

14ns

Threshold Voltage :

1.8V

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

PQFN (5x6)

Fall Time (Typ) :

4.6 ns

Element Configuration :

Single

Lead Free :

Lead Free

Package / Case :

8-PowerTDFN

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Radiation Hardening :

No

Max Operating Temperature :

150°C

Resistance :

9mOhm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Width :

5mm

Input Capacitance :

1.18nF

Turn On Delay Time :

8.3 ns

Vgs(th) (Max) @ Id :

2.35V @ 25µA