IRFH8330TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Nominal Vgs :

1.8 V

REACH SVHC :

No SVHC

Width :

5mm

Mounting Type :

Surface Mount

Rise Time :

15ns

FET Type :

N-Channel

Series :

HEXFET®

Recovery Time :

21 ns

Fall Time (Typ) :

5.7 ns

Power Dissipation :

3.3W

RoHS Status :

RoHS Compliant

Max Power Dissipation :

3.3W

Input Capacitance :

1.45nF

Length :

5.85mm

Threshold Voltage :

1.8V

Turn-Off Delay Time :

10 ns

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Packaging :

Cut Tape (CT)

Max Operating Temperature :

150°C

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

17A Ta 56A Tc

Number of Elements :

1

Supplier Device Package :

PQFN (5x6)

Radiation Hardening :

No

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 25V

Resistance :

6.6mOhm

Rds On Max :

6.6 mΩ

Lead Free :

Lead Free

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Number of Pins :

8

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

17A

Min Operating Temperature :

-55°C

Turn On Delay Time :

9.2 ns

Rds On (Max) @ Id, Vgs :

6.6mOhm @ 20A, 10V

Height :

1.17mm

Drain to Source Resistance :

6.6mOhm