IRFH8325TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Power Dissipation :

3.6W

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

7.1 ns

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F5

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

21A

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

14 ns

Power Dissipation-Max :

3.6W Ta 54W Tc

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

12 ns

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Current - Continuous Drain (Id) @ 25°C :

21A Ta 82A Tc

Rise Time :

16ns

Input Capacitance (Ciss) (Max) @ Vds :

2487pF @ 10V

Series :

HEXFET®

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Published :

2004

Transistor Element Material :

SILICON

Terminal Form :

Flat

Package / Case :

8-PowerTDFN

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Avalanche Energy Rating (Eas) :

94 mJ

Transistor Application :

SWITCHING

Number of Elements :

1

Drain-source On Resistance-Max :

0.005ohm