IRFH8325TR2PBF
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- Mfr.Part #
- IRFH8325TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 17A 5X6 PQFN
- Stock
- 15,013
- In Stock ：
- 15,013
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Drain to Source Breakdown Voltage :
- 30V
- Resistance :
- 5mOhm
- Rds On (Max) @ Id, Vgs :
- 5mOhm @ 20A, 10V
- Max Operating Temperature :
- 150°C
- Turn On Delay Time :
- 12 ns
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Input Capacitance :
- 2.487nF
- Power Dissipation :
- 3.6W
- Published :
- 2013
- Input Capacitance (Ciss) (Max) @ Vds :
- 2487pF @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 5mm
- Length :
- 5.85mm
- Series :
- HEXFET®
- Packaging :
- Cut Tape (CT)
- Fall Time (Typ) :
- 7.1 ns
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 14 ns
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 3.6W
- Package / Case :
- 8-PowerTDFN
- Vgs(th) (Max) @ Id :
- 2.35V @ 50μA
- Supplier Device Package :
- PQFN (5x6)
- Height :
- 1.17mm
- REACH SVHC :
- No SVHC
- Rise Time :
- 16ns
- Min Operating Temperature :
- -55°C
- RoHS Status :
- RoHS Compliant
- Threshold Voltage :
- 1.8V
- Continuous Drain Current (ID) :
- 21A
- Drain to Source Resistance :
- 5mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 82A Tc
- Nominal Vgs :
- 1.8 V
- Drain to Source Voltage (Vdss) :
- 30V
- Lead Free :
- Lead Free
- Recovery Time :
- 24 ns
- Rds On Max :
- 5 mΩ
- Datasheets
- IRFH8325TR2PBF
N-Channel Cut Tape (CT) 5mOhm @ 20A, 10V 2487pF @ 10V 32nC @ 10V 30V 8-PowerTDFN
IRFH8325TR2PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2487pF @ 10V.This device conducts a continuous drain current (ID) of 21A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 14 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 5mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.8V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 30V.
IRFH8325TR2PBF Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 5mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRFH8325TR2PBF Applications
There are a lot of Infineon Technologies
IRFH8325TR2PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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