IRFH8324TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3.6W Ta 54W Tc

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerTDFN

Drain Current-Max (Abs) (ID) :

50A

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

94 mJ

Turn-Off Delay Time :

14 ns

Pulsed Drain Current-Max (IDM) :

200A

Published :

2012

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

JESD-609 Code :

e3

Turn On Delay Time :

13 ns

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

High Reliability

Current - Continuous Drain (Id) @ 25°C :

23A Ta 90A Tc

Transistor Element Material :

SILICON

Mount :

Surface Mount

Series :

HEXFET®

FET Type :

N-Channel

Terminal Form :

Flat

Rise Time :

26ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

23A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

5

JESD-30 Code :

R-PDSO-F5

Radiation Hardening :

No

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2380pF @ 10V

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 20A, 10V

Number of Elements :

1

Power Dissipation :

3.6W

Fall Time (Typ) :

8.5 ns

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Nominal Vgs :

1.8 V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8