IRFH8324TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Package / Case :

8-PowerTDFN

Length :

5.85mm

FET Type :

N-Channel

Nominal Vgs :

1.8 V

Lead Free :

Lead Free

Power Dissipation-Max :

3.6W Ta 54W Tc

Turn-Off Delay Time :

14 ns

Input Capacitance :

2.38nF

Turn On Delay Time :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Width :

5mm

Series :

HEXFET®

Supplier Device Package :

PQFN (5x6)

Max Operating Temperature :

150°C

Power Dissipation :

3.6W

Element Configuration :

Single

Height :

1.17mm

Threshold Voltage :

1.8V

Gate to Source Voltage (Vgs) :

20V

Resistance :

3.1mOhm

Recovery Time :

24 ns

Drain to Source Breakdown Voltage :

30V

Rds On Max :

4.1 mΩ

Number of Elements :

1

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2380pF @ 10V

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

23A Ta 90A Tc

Operating Temperature :

-55°C~150°C TJ

Rise Time :

26ns

Drain to Source Resistance :

4.1mOhm

Published :

2012

Number of Pins :

8

Radiation Hardening :

No

Mount :

Surface Mount

Continuous Drain Current (ID) :

23A

Rds On (Max) @ Id, Vgs :

4.1mOhm @ 20A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

8.5 ns

REACH SVHC :

No SVHC