IRFH8321TRPBF
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- Mfr.Part #
- IRFH8321TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TQFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N CH 30V 21A PQFN5X6
- Stock
- 12,648
- In Stock ：
- 12,648
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation :
- 3.4W
- Vgs (Max) :
- ±20V
- Number of Pins :
- 8
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 2V @ 50μA
- Published :
- 2012
- Turn On Delay Time :
- 14 ns
- Rds On (Max) @ Id, Vgs :
- 4.9m Ω @ 20A, 10V
- Number of Channels :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 3.4W Ta 54W Tc
- Factory Lead Time :
- 16 Weeks
- Turn-Off Delay Time :
- 12 ns
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 83A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 10V
- Continuous Drain Current (ID) :
- 21A
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 6.8 ns
- Mount :
- Surface Mount
- Rise Time :
- 20ns
- Package / Case :
- 8-TQFN Exposed Pad
- Datasheets
- IRFH8321TRPBF
N-Channel Tape & Reel (TR) 4.9m Ω @ 20A, 10V ±20V 2600pF @ 10V 59nC @ 10V 8-TQFN Exposed Pad
IRFH8321TRPBF Overview
A device's maximum input capacitance is 2600pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 21A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 12 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRFH8321TRPBF Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
IRFH8321TRPBF Applications
There are a lot of Infineon Technologies
IRFH8321TRPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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