IRFH8311TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.6W Ta 96W Tc

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

32A Ta 169A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Rise Time :

26ns

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Series :

HEXFET®

ECCN Code :

EAR99

Package / Case :

8-TQFN Exposed Pad

Turn On Delay Time :

21 ns

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Published :

2007

Continuous Drain Current (ID) :

32A

Turn-Off Delay Time :

21 ns

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds :

4960pF @ 10V

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 20A, 10V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Power Dissipation :

3.6W

Fall Time (Typ) :

12 ns

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Configuration :

Single