IRFH8307TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Power Dissipation :

3.6W

Series :

HEXFET®, StrongIRFET™

Turn On Delay Time :

26 ns

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Number of Terminations :

5

Power Dissipation-Max :

3.6W Ta 156W Tc

Continuous Drain Current (ID) :

100A

Current - Continuous Drain (Id) @ 25°C :

42A Ta 100A Tc

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

420 mJ

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Package / Case :

8-PowerTDFN

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

1.8V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Number of Channels :

1

Rise Time :

30ns

Drain Current-Max (Abs) (ID) :

42A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

400A

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 15V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Published :

2013

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-N5

Fall Time (Typ) :

13 ns

Turn-Off Delay Time :

31 ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 50A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED