IRFH8202TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Threshold Voltage :

1.8V

Power Dissipation :

3.6W

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Power Dissipation-Max :

3.6W Ta 160W Tc

Package / Case :

8-PowerTDFN

REACH SVHC :

No SVHC

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Fall Time (Typ) :

19 ns

Turn On Delay Time :

28 ns

Turn-Off Delay Time :

30 ns

Current - Continuous Drain (Id) @ 25°C :

47A Ta 100A Tc

Drain to Source Breakdown Voltage :

25V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

1.05m Ω @ 50A, 10V

Published :

2013

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Factory Lead Time :

12 Weeks

Series :

HEXFET®, StrongIRFET™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

7174pF @ 13V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Continuous Drain Current (ID) :

100A

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rise Time :

46ns

Mounting Type :

Surface Mount