IRFH8201TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Fall Time (Typ) :

22 ns

Threshold Voltage :

1.8V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

0.95m Ω @ 50A, 10V

Lead Free :

Lead Free

Published :

2013

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Series :

HEXFET®, StrongIRFET™

Gate Charge (Qg) (Max) @ Vgs :

111nC @ 10V

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

49A Ta 100A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Turn On Delay Time :

27 ns

Power Dissipation-Max :

3.6W Ta 156W Tc

Power Dissipation :

3.6W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

31 ns

Package / Case :

8-PowerTDFN

Drain to Source Voltage (Vdss) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

7330pF @ 13V

ECCN Code :

EAR99

Mount :

Surface Mount

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Gate to Source Voltage (Vgs) :

20V

Rise Time :

54ns

Continuous Drain Current (ID) :

100A