IRFH7936TRPBF
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- Mfr.Part #
- IRFH7936TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 20A/54A 8PQFN
- Stock
- 7,175
- In Stock ：
- 7,175
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2009
- Drain to Source Breakdown Voltage :
- 30V
- Series :
- HEXFET®
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- Fall Time (Typ) :
- 7 ns
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 17 ns
- Width :
- 6.1468mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 5.2324mm
- Continuous Drain Current (ID) :
- 54A
- Drain Current-Max (Abs) (ID) :
- 76A
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta 54A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 19 ns
- FET Type :
- N-Channel
- Power Dissipation :
- 3.1W
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 12ns
- Rds On (Max) @ Id, Vgs :
- 4.8m Ω @ 20A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2360pF @ 15V
- Package / Case :
- 8-PowerTDFN
- REACH SVHC :
- No SVHC
- Number of Pins :
- 8
- Power Dissipation-Max :
- 3.1W Ta
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.35V @ 50μA
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.1684mm
- Factory Lead Time :
- 16 Weeks
- Datasheets
- IRFH7936TRPBF
N-Channel Tape & Reel (TR) 4.8m Ω @ 20A, 10V ±20V 2360pF @ 15V 26nC @ 4.5V 8-PowerTDFN
IRFH7936TRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2360pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 54A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 76A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRFH7936TRPBF Features
a continuous drain current (ID) of 54A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns
IRFH7936TRPBF Applications
There are a lot of Infineon Technologies
IRFH7936TRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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