IRFH7934TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

24A Ta 76A Tc

Pulsed Drain Current-Max (IDM) :

190A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Avalanche Energy Rating (Eas) :

97 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

3.1W

Transistor Application :

SWITCHING

Fall Time (Typ) :

7.5 ns

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Turn-Off Delay Time :

14 ns

Power Dissipation-Max :

3.1W Ta

ECCN Code :

EAR99

Published :

2009

JESD-30 Code :

R-PDSO-N3

Series :

HEXFET®

Height :

1.1684mm

Nominal Vgs :

1.8 V

Continuous Drain Current (ID) :

24A

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

3

Mounting Type :

Surface Mount

Width :

6.1468mm

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 24A, 10V

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Termination :

SMD/SMT

Length :

5.2324mm

Drain Current-Max (Abs) (ID) :

76A

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

REACH SVHC :

No SVHC

Turn On Delay Time :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 15V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0035Ohm

Dual Supply Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Rise Time :

16ns

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerTDFN