IRFH7934TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Max Power Dissipation :

3.1W

Nominal Vgs :

1.8 V

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Fall Time (Typ) :

7.5 ns

Power Dissipation :

3.1W

Drain to Source Resistance :

3.5mOhm

Continuous Drain Current (ID) :

24A

Input Capacitance :

3.1nF

Packaging :

Cut Tape (CT)

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

24A Ta 76A Tc

Length :

5.2324mm

Turn On Delay Time :

12 ns

Height :

1.1684mm

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Rds On (Max) @ Id, Vgs :

3.5mOhm @ 24A, 10V

Turn-Off Delay Time :

14 ns

Drain to Source Breakdown Voltage :

30V

Series :

HEXFET®

Threshold Voltage :

1.8V

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Width :

6.1468mm

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 15V

Published :

2009

Rise Time :

16ns

RoHS Status :

RoHS Compliant

Supplier Device Package :

8-PQFN (5x6)

Number of Elements :

1

Resistance :

3.5mOhm

Recovery Time :

30 ns

Package / Case :

8-PowerTDFN

Mount :

Surface Mount

Number of Pins :

8

Max Operating Temperature :

150°C

Rds On Max :

3.5 mΩ