IRFH7932TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

939.8μm

Number of Elements :

1

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

25A

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PDSO-N3

FET Type :

N-Channel

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

4270pF @ 15V

Turn On Delay Time :

20 ns

Power Dissipation :

3.4W

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Packaging :

Tape and Reel (TR)

Threshold Voltage :

1.8V

Published :

2008

Width :

5.1mm

Power Dissipation-Max :

3.4W Ta

JESD-609 Code :

e3

Length :

6.096mm

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 25A, 10V

Series :

HEXFET®

Termination :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

20 ns

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

23 ns

Dual Supply Voltage :

30V

Rise Time :

48ns

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

1.8 V

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.0033Ohm

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Package / Case :

8-PowerVDFN

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

24A

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

24A Ta 104A Tc

Operating Temperature :

-55°C~150°C TJ