IRFH7921TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Threshold Voltage :

1.8V

Turn On Delay Time :

12 ns

Power Dissipation-Max :

3.1W Ta

Published :

2013

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Number of Elements :

1

Length :

6mm

Power Dissipation :

3.1W

Lead Free :

Lead Free

Fall Time (Typ) :

4.7 ns

Resistance :

8.5mOhm

Recovery Time :

18 ns

Series :

HEXFET®

Supplier Device Package :

PQFN (5x6) Single Die

Max Operating Temperature :

150°C

Turn-Off Delay Time :

14 ns

Min Operating Temperature :

-55°C

Height :

950μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Drain to Source Resistance :

8.5mOhm

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

1.8 V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

8.5mOhm @ 15A, 10V

Input Capacitance :

1.21nF

Continuous Drain Current (ID) :

15A

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerVDFN

Mount :

Surface Mount

Rise Time :

7.6ns

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Rds On Max :

8.5 mΩ

Current - Continuous Drain (Id) @ 25°C :

15A Ta 34A Tc

Drain to Source Breakdown Voltage :

30V

Width :

5mm

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 15V