IRFH7914TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

JESD-30 Code :

R-PDSO-N3

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Turn-Off Delay Time :

12 ns

Threshold Voltage :

1.8V

Radiation Hardening :

No

Published :

2008

Base Part Number :

IRFH7914

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 14A, 10V

Fall Time (Typ) :

4.6 ns

Width :

6.1468mm

Terminal Finish :

Matte Tin (Sn)

Rise Time :

11ns

Resistance :

8.7mOhm

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Turn On Delay Time :

11 ns

Nominal Vgs :

1.8 V

Continuous Drain Current (ID) :

35A

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

30V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Length :

5.2324mm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Series :

HEXFET®

Height :

1.1684mm

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 15V

Number of Pins :

8

Power Dissipation :

3.1W

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Termination :

SMD/SMT

Vgs (Max) :

±20V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Power Dissipation-Max :

3.1W Ta

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

15A Ta 35A Tc

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3