IRFH7885TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

22A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8

Drain-source On Resistance-Max :

0.0039Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Series :

FASTIRFET™

Pulsed Drain Current-Max (IDM) :

250A

Number of Elements :

1

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

202 mJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.6W Ta 156W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

2311pF @ 40V

JESD-30 Code :

R-PDSO-N5

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

80V

Published :

2013

Vgs(th) (Max) @ Id :

3.6V @ 150μA

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 50A, 10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Terminal Form :

NO LEAD

Package / Case :

8-VQFN

ECCN Code :

EAR99