IRFH7882TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-N5

Pulsed Drain Current-Max (IDM) :

290A

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

26A Ta

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8

RoHS Status :

RoHS Compliant

Series :

FASTIRFET™

Terminal Position :

Dual

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

3186pF @ 40V

Power Dissipation-Max :

4W Ta 195W Tc

Published :

2013

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

704 mJ

Drain to Source Voltage (Vdss) :

80V

Drain-source On Resistance-Max :

0.0031Ohm

ECCN Code :

EAR99

Number of Elements :

1

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-VQFN

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

26A

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Terminal Form :

NO LEAD

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 50A, 10V