IRFH7446TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Terminations :

5

Threshold Voltage :

2.2V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Package / Case :

8-TQFN Exposed Pad

Transistor Element Material :

SILICON

Number of Elements :

1

Drain to Source Breakdown Voltage :

40V

Vgs(th) (Max) @ Id :

3.9V @ 100µA

Fall Time (Typ) :

26 ns

Resistance :

3.3MOhm

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Width :

5mm

Continuous Drain Current (ID) :

85A

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 50A, 10V

Rise Time :

37ns

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation :

78W

Vgs (Max) :

±20V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

3174pF @ 25V

Number of Pins :

5

Turn-Off Delay Time :

33 ns

Published :

2008

FET Type :

N-Channel

Element Configuration :

Single

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

468A

Turn On Delay Time :

11 ns

Transistor Application :

SWITCHING

Terminal Form :

Flat

Power Dissipation-Max :

78W Tc

Operating Temperature :

-55°C~150°C TJ

Height :

1.17mm

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Series :

HEXFET®, StrongIRFET™

Length :

5.85mm