IRFH7440TRPBF
- Mfr.Part #
- IRFH7440TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 85A 8PQFN
- Stock
- 97,570
- In Stock :
- 97,570
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 50A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 138nC @ 10V
- Radiation Hardening :
- No
- Threshold Voltage :
- 2.2V
- Package / Case :
- 8-PowerTDFN
- Current - Continuous Drain (Id) @ 25°C :
- 85A Tc
- Vgs(th) (Max) @ Id :
- 3.9V @ 100µA
- Drain to Source Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4574pF @ 25V
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Vgs (Max) :
- ±20V
- Published :
- 2012
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 104W Tc
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 53 ns
- FET Type :
- N-Channel
- Power Dissipation :
- 104W
- Factory Lead Time :
- 12 Weeks
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HEXFET®, StrongIRFET™
- Rise Time :
- 45ns
- Turn On Delay Time :
- 12 ns
- Resistance :
- 2.4MOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 85A
- Height :
- 1.05mm
- Fall Time (Typ) :
- 42 ns
- Max Junction Temperature (Tj) :
- 150°C
- Width :
- 5mm
- Length :
- 5.85mm
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRFH7440TRPBF

N-Channel Tape & Reel (TR) 2.4m Ω @ 50A, 10V ±20V 4574pF @ 25V 138nC @ 10V 8-PowerTDFN
IRFH7440TRPBF Description
The IRFH7440TRPBF is a HEXFET? single N-channel Power MOSFET offering improved gate, avalanche, and dynamic dV/dt ruggedness. The Infineon IRFH7440TRPBF is suitable for PWM inverter topologies, battery-powered circuits, half-bridge, and full-bridge topologies, electronic ballast applications, and synchronous rectifier applications.
IRFH7440TRPBF Features
-
Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness
-
Fully Characterized Capacitance and Avalanche SOA
-
Enhanced body diode dV/dt and dI/dt Capability
-
RoHS Compliant containing no Lead, no Bromide, and no Halogen
-
Operating Junction and Storage Temperature Range: -55 to 150℃
IRFH7440TRPBF Applications
-
PWM inverter topologies
-
Battery-powered circuits
-
Half-bridge and full-bridge topologies
-
Electronic ballast applications
-
Synchronous rectifier applications
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