IRFH7188TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Form :

Flat

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Mounting Type :

Surface Mount

Number of Elements :

1

Avalanche Energy Rating (Eas) :

493 mJ

DS Breakdown Voltage-Min :

100V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.8W Ta 132W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-PowerTDFN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.9V @ 150μA

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

18A Ta 105A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

105A

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

FASTIRFET™, HEXFET®

JESD-30 Code :

R-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

2116pF @ 50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Mount :

Surface Mount

Published :

2013

Pulsed Drain Current-Max (IDM) :

210A

Terminal Position :

Dual

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

6m Ω @ 50A, 10V

Number of Terminations :

5

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Resistance :

6.6mOhm