IRFH7187TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

Avalanche Energy Rating (Eas) :

493 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

210A

Terminal Form :

NO LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2116pF @ 50V

RoHS Status :

RoHS Compliant

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Number of Terminations :

5

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-N5

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

18A Ta 105A Tc

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.6V @ 150μA

Continuous Drain Current (ID) :

105A

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Package / Case :

8-PowerVDFN

Drain-source On Resistance-Max :

0.006Ohm

Series :

FASTIRFET™, HEXFET®

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

3.8W Ta 132W Tc

Rds On (Max) @ Id, Vgs :

6m Ω @ 50A, 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Number of Pins :

8

Case Connection :

DRAIN