IRFH7185TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Width :

5.15mm

Length :

6.15mm

Continuous Drain Current (ID) :

19A

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

360 mJ

Height :

950μm

Operating Mode :

ENHANCEMENT MODE

Published :

2008

Vgs(th) (Max) @ Id :

3.6V @ 150μA

Transistor Element Material :

SILICON

Number of Terminations :

5

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

260A

Rise Time :

9.9ns

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Fall Time (Typ) :

3.9 ns

Number of Pins :

8

Vgs (Max) :

±20V

Series :

FASTIRFET™, HEXFET®

Drain-source On Resistance-Max :

0.0052Ohm

Base Part Number :

IRFH7185

Packaging :

Tape and Reel (TR)

Threshold Voltage :

3.6V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

14 ns

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Terminal Position :

Dual

Power Dissipation-Max :

3.6W Ta 160W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

16 Weeks

REACH SVHC :

No SVHC

Power Dissipation :

3.6W

JESD-30 Code :

R-PDSO-N5

Package / Case :

8-PowerTDFN

Number of Channels :

1

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2320pF @ 50V

Turn On Delay Time :

6.5 ns

Current - Continuous Drain (Id) @ 25°C :

19A Ta

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 50A, 10V

Element Configuration :

Single

RoHS Status :

RoHS Compliant