IRFH7184TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Number of Terminations :

5

Mount :

Surface Mount

Published :

2013

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 50A, 10V

Pulsed Drain Current-Max (IDM) :

260A

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

3.9W Ta 156W Tc

Vgs(th) (Max) @ Id :

3.6V @ 150μA

Series :

FASTIRFET™, HEXFET®

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

2320pF @ 50V

Continuous Drain Current (ID) :

128A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

20A Ta 128A Tc

Resistance :

4.8mOhm

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

20A

Avalanche Energy Rating (Eas) :

360 mJ

Case Connection :

DRAIN

FET Type :

N-Channel

Transistor Element Material :

SILICON