IRFH7182TRPBF
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- Mfr.Part #
- IRFH7182TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 23A/157A 8PQFN
- Stock
- 5,930
- In Stock ：
- 5,930
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 23A
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta 157A Tc
- RoHS Status :
- RoHS Compliant
- Package / Case :
- 8-PowerTDFN
- Input Capacitance (Ciss) (Max) @ Vds :
- 3120pF @ 50V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 4W Ta 195W Tc
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PDSO-N5
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 728 mJ
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 157A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id :
- 3.6V @ 250µA
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Terminal Form :
- NO LEAD
- Gate Charge (Qg) (Max) @ Vgs :
- 74nC @ 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Case Connection :
- DRAIN
- Series :
- FASTIRFET™, HEXFET®
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 5
- Published :
- 2013
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.0039Ohm
- DS Breakdown Voltage-Min :
- 100V
- Pulsed Drain Current-Max (IDM) :
- 320A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRFH7182TRPBF
N-Channel Tape & Reel (TR) 3.9m Ω @ 50A, 10V ±20V 3120pF @ 50V 74nC @ 10V 100V 8-PowerTDFN
IRFH7182TRPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 728 mJ.A device's maximum input capacitance is 3120pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 157A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 23A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFH7182TRPBF Features
the avalanche energy rating (Eas) is 728 mJ
a continuous drain current (ID) of 157A
based on its rated peak drain current 320A.
a 100V drain to source voltage (Vdss)
IRFH7182TRPBF Applications
There are a lot of Infineon Technologies
IRFH7182TRPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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