IRFH7110TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Mount :

Surface Mount

Width :

5mm

Pulsed Drain Current-Max (IDM) :

240A

Terminal Position :

Dual

Turn On Delay Time :

11 ns

Power Dissipation-Max :

3.6W Ta 104W Tc

Drain Current-Max (Abs) (ID) :

50A

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Series :

HEXFET®

Transistor Application :

SWITCHING

Package / Case :

8-TQFN Exposed Pad

Number of Elements :

1

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

REACH SVHC :

No SVHC

Fall Time (Typ) :

18 ns

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

11A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

3240pF @ 25V

Height :

1.17mm

JESD-30 Code :

R-PDSO-F5

Rise Time :

23ns

Current - Continuous Drain (Id) @ 25°C :

11A Ta 58A Tc

Power Dissipation :

3.6W

Vgs (Max) :

±20V

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Transistor Element Material :

SILICON

Radiation Hardening :

No

Turn-Off Delay Time :

22 ns

Factory Lead Time :

15 Weeks

ECCN Code :

EAR99

Nominal Vgs :

3 V

Vgs(th) (Max) @ Id :

4V @ 100µA

Length :

5.85mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 35A, 10V