IRFH7085TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

554 mJ

Terminal Form :

NO LEAD

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Continuous Drain Current (ID) :

23A

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

6460pF @ 25V

Pulsed Drain Current-Max (IDM) :

590A

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Height :

950μm

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Position :

Dual

Published :

2008

Mount :

Surface Mount

Rise Time :

25ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Length :

6.15mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

5.15mm

Number of Channels :

1

Fall Time (Typ) :

23 ns

Lead Free :

Lead Free

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-N5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

13 ns

Threshold Voltage :

3.7V

Drain-source On Resistance-Max :

0.0032Ohm

Number of Terminations :

5

Turn-Off Delay Time :

63 ns

Series :

StrongIRFET™

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 75A, 10V

Element Configuration :

Single

Vgs (Max) :

±20V

Package / Case :

8-PowerVDFN

Power Dissipation-Max :

156W Tc

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

Power Dissipation :

156W

Vgs(th) (Max) @ Id :

3.7V @ 150μA