IRFH7004TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Length :

6mm

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®, StrongIRFET™

Power Dissipation :

156W

Power Dissipation-Max :

156W Tc

Continuous Drain Current (ID) :

100A

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Height :

850μm

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

73 ns

Gate Charge (Qg) (Max) @ Vgs :

194nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

5mm

Published :

2012

Number of Elements :

1

Case Connection :

DRAIN

Number of Pins :

5

DS Breakdown Voltage-Min :

40V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Terminal Position :

Dual

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Radiation Hardening :

No

Turn On Delay Time :

15 ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3.9V @ 150μA

Package / Case :

8-VQFN Exposed Pad

Rise Time :

51ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

FET Type :

N-Channel

Nominal Vgs :

3 V

Input Capacitance (Ciss) (Max) @ Vds :

6419pF @ 25V

Fall Time (Typ) :

49 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 100A, 10V

Drain to Source Voltage (Vdss) :

40V

Mount :

Surface Mount

Threshold Voltage :

3V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

100A Tc