IRFH7004TR2PBF

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Mfr.Part #
IRFH7004TR2PBF
Manufacturer
Infineon Technologies
Package / Case
8-VQFN Exposed Pad
Datasheet
Download
Description
MOSFET N CH 40V 100A PQFN5X6
Stock
30,119
In Stock :
30,119

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Cut Tape (CT)
Continuous Drain Current (ID) :
100A
Max Operating Temperature :
150°C
FET Type :
N-Channel
Input Capacitance :
6.419nF
Number of Pins :
5
Input Capacitance (Ciss) (Max) @ Vds :
6419pF @ 25V
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Rds On Max :
1.4 mΩ
REACH SVHC :
No SVHC
Rise Time :
51ns
Nominal Vgs :
3 V
RoHS Status :
RoHS Compliant
Max Power Dissipation :
156W
Radiation Hardening :
No
Vgs(th) (Max) @ Id :
3.9V @ 150μA
Fall Time (Typ) :
49 ns
Package / Case :
8-VQFN Exposed Pad
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
194nC @ 10V
Supplier Device Package :
8-PQFN (5x6)
Turn-Off Delay Time :
73 ns
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Turn On Delay Time :
15 ns
Rds On (Max) @ Id, Vgs :
1.4mOhm @ 100A, 10V
Published :
2012
Drain to Source Voltage (Vdss) :
40V
Series :
HEXFET®, StrongIRFET™
Min Operating Temperature :
-55°C
Datasheets
IRFH7004TR2PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFH7004TR2PBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:5, Package / Case:8-VQFN Exposed Pad, Mounting Type:Surface Mount, IRFH7004TR2PBF pinout, IRFH7004TR2PBF datasheet PDF, IRFH7004TR2PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFH7004TR2PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFH7004TR2PBF


N-Channel Cut Tape (CT) 1.4mOhm @ 100A, 10V 6419pF @ 25V 194nC @ 10V 40V 8-VQFN Exposed Pad

IRFH7004TR2PBF Overview


A device's maximum input capacitance is 6419pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 73 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).

IRFH7004TR2PBF Features


a continuous drain current (ID) of 100A
the turn-off delay time is 73 ns
a 40V drain to source voltage (Vdss)


IRFH7004TR2PBF Applications


There are a lot of Infineon Technologies
IRFH7004TR2PBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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