IRFH6200TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

8-PQFN (5x6)

Current - Continuous Drain (Id) @ 25°C :

49A Ta 100A Tc

Number of Elements :

1

Package / Case :

8-PowerVDFN

Fall Time (Typ) :

160 ns

Radiation Hardening :

No

Element Configuration :

Single

Series :

HEXFET®

Width :

5mm

Max Operating Temperature :

150°C

Rise Time :

74ns

Nominal Vgs :

800 mV

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

100A

Lead Free :

Lead Free

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.1V @ 150μA

Input Capacitance (Ciss) (Max) @ Vds :

10890pF @ 10V

Rds On Max :

950 μΩ

Drain to Source Resistance :

1.2mOhm

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Power Dissipation :

156W

REACH SVHC :

No SVHC

Packaging :

Cut Tape (CT)

Drain to Source Breakdown Voltage :

20V

Max Power Dissipation :

3.6W

Number of Pins :

8

Threshold Voltage :

800mV

Mounting Type :

Surface Mount

Recovery Time :

130 ns

Length :

5.9944mm

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 4.5V

Input Capacitance :

10.89nF

Rds On (Max) @ Id, Vgs :

0.95mOhm @ 50A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

1.2mOhm

Published :

2010

Turn-Off Delay Time :

140 ns

Turn On Delay Time :

14 ns

Height :

838.2μm