IRFH5406TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

2 V

Threshold Voltage :

4V

Operating Temperature :

-55°C~150°C TJ

Manufacturer Package Identifier :

IRFH5406TRPBF

Case Connection :

DRAIN

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

11A Ta 40A Tc

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

JESD-609 Code :

e3

Lead Free :

Lead Free

Height :

900μm

Drain to Source Breakdown Voltage :

60V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Length :

5.9944mm

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Turn-Off Delay Time :

5.4 ns

REACH SVHC :

No SVHC

Radiation Hardening :

No

Published :

2011

Number of Channels :

1

Turn On Delay Time :

12 ns

Power Dissipation :

3.6W

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-N5

ECCN Code :

EAR99

Continuous Drain Current (ID) :

40A

Resistance :

14.4MOhm

Input Capacitance (Ciss) (Max) @ Vds :

1256pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 50μA

Fall Time (Typ) :

3.5 ns

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

45 mJ

Rise Time :

8.7ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

14.4m Ω @ 24A, 10V

Width :

5mm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.6W Ta 46W Tc

Number of Pins :

8

Package / Case :

8-PowerVDFN