IRFH5406TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Published :

2011

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150°C

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Element Configuration :

Single

Threshold Voltage :

4V

Rds On Max :

2.3 mΩ

Vgs(th) (Max) @ Id :

4V @ 50μA

Height :

810μm

Drain to Source Resistance :

14.4MOhm

REACH SVHC :

No SVHC

Recovery Time :

30 ns

Max Power Dissipation :

3.6W

Lead Free :

Lead Free

Continuous Drain Current (ID) :

40A

Packaging :

Cut Tape (CT)

Power Dissipation :

3.6W

Turn On Delay Time :

5.4 ns

Mounting Type :

Surface Mount

Supplier Device Package :

8-PQFN (5x6)

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

1256pF @ 25V

Width :

5.0038mm

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Fall Time (Typ) :

3.5 ns

Current - Continuous Drain (Id) @ 25°C :

11A Ta 40A Tc

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Package / Case :

8-PowerVDFN

Rds On (Max) @ Id, Vgs :

14.4mOhm @ 24A, 10V

Number of Elements :

1

Radiation Hardening :

No

Length :

5mm

Input Capacitance :

1.256nF

RoHS Status :

RoHS Compliant

Number of Pins :

8

Rise Time :

8.7ns

Turn-Off Delay Time :

12 ns

Nominal Vgs :

2 V