IRFH5306TR2PBF
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- Mfr.Part #
- IRFH5306TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 15A 5X6 PQFN
- Stock
- 1,053
- In Stock ：
- 1,053
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.35V @ 25µA
- Rds On (Max) @ Id, Vgs :
- 8.1mOhm @ 15A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta 44A Tc
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 6.1 ns
- Turn On Delay Time :
- 9 ns
- Height :
- 900μm
- Drain to Source Voltage (Vdss) :
- 30V
- Drain to Source Resistance :
- 8.1mOhm
- Length :
- 6mm
- Number of Pins :
- 8
- Continuous Drain Current (ID) :
- 44A
- Number of Elements :
- 1
- Input Capacitance :
- 1.125nF
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- 1.8V
- Max Power Dissipation :
- 3.6W
- Nominal Vgs :
- 1.8 V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-PowerVDFN
- Min Operating Temperature :
- -55°C
- Recovery Time :
- 26 ns
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1125pF @ 15V
- Power Dissipation :
- 3.6W
- RoHS Status :
- RoHS Compliant
- Series :
- HEXFET®
- REACH SVHC :
- No SVHC
- Rds On Max :
- 8.1 mΩ
- Published :
- 2013
- Resistance :
- 8.1mOhm
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 4.5V
- Rise Time :
- 26ns
- Supplier Device Package :
- PQFN (5x6) Single Die
- Width :
- 5mm
- Max Operating Temperature :
- 150°C
- Packaging :
- Cut Tape (CT)
- Turn-Off Delay Time :
- 9.1 ns
- Radiation Hardening :
- No
- Datasheets
- IRFH5306TR2PBF
N-Channel Cut Tape (CT) 8.1mOhm @ 15A, 10V 1125pF @ 15V 12nC @ 4.5V 30V 8-PowerVDFN
IRFH5306TR2PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1125pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 44A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [9.1 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 8.1mOhm.A turn-on delay time of 9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).
IRFH5306TR2PBF Features
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 9.1 ns
single MOSFETs transistor is 8.1mOhm
a threshold voltage of 1.8V
a 30V drain to source voltage (Vdss)
IRFH5306TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5306TR2PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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