IRFH5304TR2PBF
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- Mfr.Part #
- IRFH5304TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 22A 8VQFN
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 12 ns
- Continuous Drain Current (ID) :
- 79A
- Max Power Dissipation :
- 3.6W
- Mount :
- Surface Mount
- Nominal Vgs :
- 2.35 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 1.65nF
- FET Type :
- N-Channel
- Length :
- 5mm
- Recovery Time :
- 29 ns
- Package / Case :
- 8-PowerVDFN
- Width :
- 5.0038mm
- Rds On (Max) @ Id, Vgs :
- 4.5mOhm @ 47A, 10V
- Vgs(th) (Max) @ Id :
- 2.35V @ 50μA
- Rds On Max :
- 4 mΩ
- Supplier Device Package :
- 8-PQFN (5x6)
- Fall Time (Typ) :
- 6.6 ns
- Rise Time :
- 25ns
- Threshold Voltage :
- 2.35V
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Series :
- HEXFET®
- Packaging :
- Cut Tape (CT)
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 8
- REACH SVHC :
- No SVHC
- RoHS Status :
- RoHS Compliant
- Drain to Source Resistance :
- 4.5mOhm
- Turn On Delay Time :
- 13 ns
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2360pF @ 10V
- Power Dissipation :
- 46W
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Published :
- 2010
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta 79A Tc
- Height :
- 810μm
- Datasheets
- IRFH5304TR2PBF
N-Channel Cut Tape (CT) 4.5mOhm @ 47A, 10V 2360pF @ 10V 41nC @ 10V 30V 8-PowerVDFN
IRFH5304TR2PBF Overview
A device's maximum input capacitance is 2360pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 79A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 12 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 4.5mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.35V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).
IRFH5304TR2PBF Features
a continuous drain current (ID) of 79A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 4.5mOhm
a threshold voltage of 2.35V
a 30V drain to source voltage (Vdss)
IRFH5304TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5304TR2PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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