IRFH5303TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Number of Pins :

8

Transistor Application :

SWITCHING

Power Dissipation :

3.6W

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

330A

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-N5

Number of Elements :

1

Power Dissipation-Max :

3.6W Ta 46W Tc

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 49A, 10V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

23A

Published :

2010

Turn On Delay Time :

11 ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

46 mJ

Rise Time :

31ns

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-PowerVDFN

Fall Time (Typ) :

6.1 ns

FET Type :

N-Channel

Additional Feature :

High Reliability

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

23A Ta 82A Tc

Width :

5mm

Length :

5.9944mm

Turn-Off Delay Time :

8.8 ns

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2190pF @ 15V

Vgs (Max) :

±20V

Number of Terminations :

5

Terminal Position :

Dual

Height :

838.2μm

Case Connection :

DRAIN