IRFH5303TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

31ns

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Package / Case :

8-PowerVDFN

Power Dissipation-Max :

3.6W Ta 46W Tc

Series :

HEXFET®

Nominal Vgs :

1.8 V

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

6.1 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

23A

Element Configuration :

Single

Supplier Device Package :

8-PQFN (5x6)

Current - Continuous Drain (Id) @ 25°C :

23A Ta 82A Tc

Recovery Time :

29 ns

Length :

5.9944mm

Turn-Off Delay Time :

8.8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

838.2μm

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Input Capacitance :

2.19nF

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Number of Pins :

8

Turn On Delay Time :

11 ns

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Width :

5mm

Power Dissipation :

3.6W

Rds On Max :

4.2 mΩ

Max Operating Temperature :

150°C

Radiation Hardening :

No

Drain to Source Resistance :

4.2mOhm

Published :

2013

Mount :

Surface Mount

Vgs (Max) :

±20V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

4.2mOhm @ 49A, 10V

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds :

2190pF @ 15V