IRFH5302TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

22 ns

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

3.6W

REACH SVHC :

No SVHC

Recovery Time :

29 ns

Max Operating Temperature :

150°C

Power Dissipation :

100W

Current - Continuous Drain (Id) @ 25°C :

32A Ta 100A Tc

Rise Time :

51ns

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Mount :

Surface Mount

FET Type :

N-Channel

Input Capacitance :

4.4nF

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Width :

6mm

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 15V

Rds On Max :

2.1 mΩ

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

2.1mOhm @ 50A, 10V

Package / Case :

8-PowerVDFN

Continuous Drain Current (ID) :

100A

Turn On Delay Time :

18 ns

Fall Time (Typ) :

18 ns

Supplier Device Package :

PQFN (5x6) Single Die

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Nominal Vgs :

1.8 V

Number of Elements :

1

Series :

HEXFET®

Published :

2009

Drain to Source Resistance :

2.1MOhm

Threshold Voltage :

1.8V

Lead Free :

Lead Free

Height :

810μm

Length :

5mm

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Packaging :

Cut Tape (CT)

Element Configuration :

Single

Radiation Hardening :

No