IRFH5302DTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Height :

838.2μm

Package / Case :

8-PowerVDFN

Pulsed Drain Current-Max (IDM) :

400A

Number of Terminations :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

30V

Number of Pins :

8

Vgs (Max) :

±20V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

29A Ta 100A Tc

ECCN Code :

EAR99

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

100A

Power Dissipation :

3.6W

Turn-Off Delay Time :

20 ns

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Length :

5.9944mm

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Resistance :

2.5MOhm

Radiation Hardening :

No

Turn On Delay Time :

16 ns

Fall Time (Typ) :

12 ns

Width :

5mm

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

29A

Power Dissipation-Max :

3.6W Ta 104W Tc

JESD-609 Code :

e3

Published :

2010

Case Connection :

DRAIN

JESD-30 Code :

R-PDSO-N5

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3635pF @ 25V

Number of Elements :

1

Rise Time :

30ns

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 50A, 10V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ